Title :
A comparison of oxidation induced stress and defectivity in SIMOX and bonded SOI wafers
Author :
Mendicino, M. ; Yang, I. ; Cave, N. ; Veeraraghavan, S. ; Gilbert, P.
Author_Institution :
Dept. of Mater. Res. & Strategic Technol., Motorola Inc., Austin, TX, USA
Abstract :
We have shown that the trench liner oxidation step in Mesa or shallow trench isolation can affect stress in active Si areas. Significant differences in the response to that stress were observed between SIMOX and Bonded SOI wafers. Our results indicate that a threshold for stress relaxation exists in trench-isolated structures which is much larger for Bonded SOI wafers than for SIMOX with TBOX =3700 Å
Keywords :
SIMOX; SIMOX; bonded SOI wafer; defectivity; mesa isolation; shallow trench isolation; stress relaxation; trench liner oxidation; Crystalline materials; Isolation technology; Laboratories; Oxidation; Research and development; Silicon on insulator technology; Stress; Switches; Temperature measurement; Wafer bonding;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634968
