Understanding integration damage to low-k films: mechanisms and dielectric behaviour at 100kHz and 4GHz

Author

Iacopi, F. ; Richard, O. ; Van Aelst, J. ; Mannaert, G. ; Talanov, V.V. ; Scherz, A. ; Schwartz, A.R. ; Bender, H. ; Travaly, Y. ; Brongersma, S.H. ; Antonelli, G.A. ; Moinpour, M. ; Beyer, G.

Author_Institution

IMEC, Leuven

fYear

2006

fDate

5-7 June 2006

Firstpage

12

Lastpage

14

Abstract

Novel in-line characterization techniques such as SAWs and a near-field microwave probe are combined to more widely studied physical and electrical off-line methodologies for the evaluation of dielectric damage. Physical characterization of the damage with EFTEM and SAWs and capacitance evaluation at 100kHz and 4GHz point out the presence of different types of low-k damage depending on the chosen patterning processes. Besides damage location (top or sidewall), the distinction between damage with and without densification is extremely important in terms of recovery and dielectric response at low and high frequency

Keywords

integrated circuit interconnections; low-k dielectric thin films; 100 kHz; 4 GHz; EFTEM; SAW technique; capacitance evaluation; damage location; dielectric behaviour; dielectric damage; low k films; near-field microwave probe; patterning processes; Acoustic measurements; Ash; Capacitance measurement; Dielectric films; Dielectric materials; Etching; Frequency; Metallization; Probes; Sawing machines;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648632

Filename

1648632