BEOL Integration of Highly Damage -Resistant Porous Ultra Low-K Material Using Direct CMP and Via-first Process

Author

Iijima, T. ; Lin, Q. ; Chen, S. ; Labelle, C. ; Fuller, N. ; Ponoth, S. ; Cohen, S. ; Lloyd, J. ; Dunn, D. ; Muzzy, C. ; Gill, J. ; Nitta, S. ; McGahay, V. ; Tyberg, C. ; Spooner, T. ; Nye, H.

Author_Institution

Toshiba America Electron. Components Inc.

fYear

2006

fDate

5-7 June 2006

Firstpage

21

Lastpage

23

Abstract

We have demonstrated porous ultra low-K (ULK)/Cu interconnect integration using via first integration scheme and a direct ULK CMP process. The key features of the damage-resistant porous ULK material were novel material chemistry, a higher carbon concentration (15.4 atm%) and an improved pore structure. These improved features of the new ULK material enabled superior process-induced dielectric material damage during patterning etch, resist strip, and ULK direct CMP. Interconnect structures fabricated using the conventional ULK material showed high short leakage currents and open failures due to moisture uptake. The integrated structures of the new, robust porous ULK material exhibited good electrical properties. The target capacitance values have been achieved for future porous ULK/Cu interconnects

Keywords

chemical mechanical polishing; integrated circuit interconnections; leakage currents; low-k dielectric thin films; porous materials; BEOL integration; damage resistance; dielectric material damage; direct CMP process; electrical properties; interconnect structures; leakage currents; patterning etch; porous material; resist strip; ultra low K material; via-first process; Capacitance; Chemistry; Dielectric materials; Etching; Leakage current; Moisture; Organic materials; Resists; Robustness; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648634

Filename

1648634