Title :
Yield and Reliability of Cu Capped with CoWP using a Self-Activated Process
Author :
Gambino, J. ; Wynne, J. ; Gill, J. ; Mongeon, S. ; Meatyard, D. ; Bamnolker, H. ; Hall, L. ; Li, N. ; Hernandez, M. ; Little, P. ; Hamed, M. ; Ivanov, I.
Author_Institution :
IBM Microelectron., Essex Junction, VT
Abstract :
Via and metal resistance, capacitance, stress migration lifetime, and high voltage leakage are characterized for Cu interconnects capped with either CoWP or CoWP + SiN. The CoWP is formed by a self-activated process using DMAB as a reducing agent, providing a very uniform CoWP film. Low via resistance and high stress migration lifetime are observed, even for relatively thin CoWP films without an SiN cap. The leakage current at high fields (3.0 MV/cm) is actually lower with a CoWP cap compared to an SiN cap
Keywords :
cobalt compounds; copper; electromigration; integrated circuit interconnections; reliability; silicon compounds; stress effects; CoWP; Cu; DMAB; SiN; copper interconnects; dymethylamine borane; high voltage leakage; metal resistance; reducing agent; self-activated process; stress migration lifetime; via resistance; CMOS image sensors; Capacitance; Copper; Dielectric devices; Electromigration; Monitoring; Silicon compounds; Stress; Testing; Voltage;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648637
