Title :
Novel polysilicon sidewall gate silicon-on-sapphire MOSFET for power amplifier applications
Author :
Johnson, R.A. ; Kasa, S.D. ; De la Houssaye, R.D. ; Garcia, G.A. ; Lagnado, I. ; Asbeck, P.M.
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
Abstract :
We report the processing and DC and microwave characteristics of a novel thin-film silicon-on-sapphire MOS transistor which utilizes a sidewall process to realize a deep sub-micron gate length without the use of lithography. The device also incorporates an asymmetric lightly doped drain region for high breakdown voltage. Devices with 0.15 and 0.25 μm gate lengths have been fabricated. A FET with a 0.25 μm gate length and 1.0 μm LDD length had an ft=9 GHz, fmax=27 GHz and breakdown voltage of 13 volts
Keywords :
elemental semiconductors; power MOSFET; power amplifiers; sapphire; silicon; silicon-on-insulator; thin film transistors; 0.15 micron; 0.25 micron; 13 V; 9 to 27 GHz; DC characteristics; Si-Al2O3; asymmetric lightly doped drain region; breakdown voltage; deep sub-micron gate length; microwave characteristics; polysilicon sidewall gate thin-film silicon-on-sapphire MOSFET; power amplifier; Etching; FETs; Lithography; MOSFET circuits; Oceans; Optical amplifiers; Power MOSFET; Power amplifiers; Silicides; Surveillance;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634970
