Title :
InP based ballistic nanodevices
Author :
Cappy, Alain ; Galloo, Jean-Sebastien ; Bollaert, Sylvain ; Roelens, Yannick ; Mateos, Javier ; Gonzalez, Tomas ; Knap, W.
Author_Institution :
IEMN, CNRS, Villeneuve d´´Ascq, France
Abstract :
The paper presents the state of the art and the future trends in the field of AlInAs/GaInAs/InP based nanometre devices, in particular ballistic T junctions and plasma wave transistors.
Keywords :
III-V semiconductors; aluminium compounds; ballistic transport; gallium arsenide; indium compounds; nanoelectronics; AlInAs-GaInAs-InP; ballistic nanodevices; ballistic transport junctions; nanometre devices; plasma wave transistors; Ballistic transport; Electron mobility; Fabrication; Geometry; Indium phosphide; Nanoscale devices; Plasma temperature; Plasma waves; Rectifiers; Shape;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517406
