Title :
Electron Scattering in Narrow Metal Wires
Author :
Gall, D. ; Purswani, J.M. ; Timochevski, V. ; Ke, Y. ; Guo, H.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY
Abstract :
A combined experimental and theoretical approach is used to develop a fundamental understanding of electron scattering at Cu surfaces. The resistivity of single crystal Cu(001) grown on MgO(001) by magnetron sputtering increases with decreasing layer thickness, due to diffuse surface scattering. Non-equilibrium ab initio quantum mechanical transport calculations indicate that atomic level surface roughness causes a dramatic increase in electron scattering, leading to increased resistivity at reduced length-scales. The here developed models will, in the future, predict the material and surface-structure requirements that lead to specular scattering which, in turn, yields high-conductivity Cu at reduced length scales
Keywords :
electrical conductivity; electrical resistivity; electron mobility; electron transport theory; integrated circuit metallisation; sputtering; surface scattering; Cu; MgO; copper surface; diffuse surface scattering; electron scattering; level surface roughness; magnetron sputtering; material requirement; narrow metal wires; quantum mechanical transport; specular scattering; surface-structure requirements; Atomic layer deposition; Conductivity; Electrons; Particle scattering; Predictive models; Quantum mechanics; Rough surfaces; Sputtering; Surface roughness; Wires;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648645