High Performance High-k MIM Capacitor with Plug-in Plate (PiP) for Power Delivery Line Hige-Speed MPUs

Author

Inoue, N. ; Ohtake, H. ; Kume, I. ; Furutake, N. ; Onodera, T. ; Saito, S. ; Tanabe, A. ; Tagami, M. ; Tada, M. ; Hayashi, Y.

Author_Institution

Syst. Devices Res. Labs., NEC Corp., Sagamihara

fYear

2006

fDate

5-7 June 2006

Firstpage

63

Lastpage

65

Abstract

High-k MIM capacitor, compatible with Cu-BEOL, is developed for reduction of power-line noises in high-speed MPUs. In order to achieve high capacity as well as low leakage current at higher temperature, a binary composite oxide of TaZrO, mixing a high permittivity oxide and a low electron affinity one, is applied to the capacitor dielectric. Besides the material design, the fully-flat plug-in plate (PiP) structure on the Cu-interconnects is introduced to reduce the parasitic resistance of the capacitor plate along with the low leakage current. Combination of the TaN PiP with TaZrO is a significant feature for decoupling devices of power delivery systems in the high performance MPUs

Keywords

MIM devices; copper; high-k dielectric thin films; high-speed integrated circuits; integrated circuit design; integrated circuit metallisation; low-power electronics; microprocessor chips; power supply circuits; tantalum compounds; thin film capacitors; BEOL; Cu; PiP; TaN-TaZrO; decoupling devices; high-k MIM capacitor; high-speed MPU; plug-in plate; power delivery line; power-line noise reduction; Capacitance; High K dielectric materials; High-K gate dielectrics; Leakage current; MIM capacitors; MOS capacitors; Noise generators; Noise reduction; Power generation; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648647

Filename

1648647