Title :
Design and modelling of a III/V mobile-gate with optical input on a silicon substrate
Author :
Prost, W. ; Kelly, P. ; Guttzeit, A. ; Khorenko, V. ; Khorenko, E. ; Matiss, A. ; Driesen, J. ; Mofor, A.-C. ; Bakin, A. ; Poloczek, A. ; Neumann, S. ; Stohr, A. ; Jager, D. ; Ginnity, M. Mc ; Schlachetzki, A. ; Tegude, F.J.
Author_Institution :
Center for Semicond. & Optoelectronics, Duisburg Univ., Germany
Abstract :
The co-integration of III/V devices such as InGaAsP PIN diode and an (In)AlAs/In(Ga)As Resonant Tunnelling Diodes with state-of-the-art silicon NMOS transistors is studied. The III/V devices layers are epitaxially grown and fabricated on silicon substrates for the extraction of model parameters. The performance of a potentially low-cost optical receiver circuit on silicon is simulated using HSPICE up to 10 Gb/s.
Keywords :
III-V semiconductors; MOSFET; SPICE; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; optical receivers; p-i-n diodes; resonant tunnelling diodes; semiconductor device models; semiconductor epitaxial layers; 10 Gbit/s; HSPICE; III-V monostable-bistable transistor logic element design; III-V monostable-bistable transistor logic element modelling; InAlAs-InGaAs; InAlAs-InGaAs resonant tunnelling diodes; InGaAsP; InGaAsP PIN diode; Si; cointegration III-V devices; device fabrication; epitaxially layers growth; optical input; optical receiver circuit; silicon substrate; state-of-the-art silicon NMOS transistors; Circuits; HEMTs; MODFETs; Optical design; Optical modulation; Optical receivers; Schottky diodes; Semiconductor diodes; Silicon; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517408
