Title :
New type of class A/F amplifier MMIC for use in commercial PCS multiple modulation format base station power amplification
Author :
Helms, D. ; Mokalla, M. ; Vladimirsky, N. ; Testa, M. ; Wills, D.
Author_Institution :
Celwave, Corvallis, OR, USA
Abstract :
A modified GaAs FET class-A/F amplifier provided greatly improved linear power in concurrent multiple modulation formats. The class A/F structure suppresses the 3rd and 5th order products more than 15.8 dB and 13 dB respectively, over a typical class A/F amplifier and 17.8 dB reduced 3rd order products verses a straight class A amplifier. The amplifier has 0.3 dB gain flatness over a 10% bandwidth.
Keywords :
MESFET integrated circuits; MMIC power amplifiers; code division multiple access; field effect MMIC; personal communication networks; PCS base station power amplification; PCS multiple modulation format; class A; class A/F amplifier MMIC; class F; concurrent multiple modulation formats; linear power; Base stations; FETs; Gallium arsenide; Interference; MMICs; Modulation; Multiaccess communication; Personal communication networks; Power amplifiers; Silicon;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682048
