Title :
Effect of CH4 plasma on porous dielectric modification & pore sealing for advanced interconnect technology nodes
Author :
Aimadeddine, M. ; Arnal, V. ; Roy, D. ; Farcy, A. ; David, T. ; Chevolleau, T. ; Possémé, N. ; Vitiello, J. ; Chapelon, L.L. ; Guedj, C. ; Brechet, Y. ; Volpi, F. ; Torres, J.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
Patterning and ashing are known to be critical steps to the integration of porous ultra low-k dielectrics in interconnects, mainly due to low-k damage during these processes. In this paper, we investigate the impact of a new methane based ash chemistry on the sidewall modification of the porous dielectric. Physical and electrical characterizations of the integrated low-k evidence a sealing effect of CH4 plasma on dielectric sidewalls as well as a gain in reliability compared to other known plasma chemistries. The impact of CH 4 chemistry on leakage mechanism is also investigated
Keywords :
integrated circuit interconnections; low-k dielectric thin films; plasma chemistry; porous materials; reliability; sputter etching; CH4; interconnect technology; methane based ash chemistry; pore sealing; porous dielectric modification; sidewall modification; ultra low-k dielectrics; Ash; Copper; Dielectric materials; Etching; Helium; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma properties;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648652
