Title :
Post-growth quantum well intermixing and hydrogen passivation for fabricating extended cavity lasers on InP with improved performance
Author :
Rao, E.V.K. ; Theys, B. ; Qiu, B.C. ; Bryce, A.C. ; Marsh, J.H.
Author_Institution :
CNRS-LPN, Marcoussis, France
Abstract :
This paper describes the fabrication of extended cavity lasers (ECLs) with improved performance in InGaAs/InGaAsP/InP multiple quantum wells (MQWs) materials using a combination of quantum well intermixing (QWI) and dopant or defect passivation by atomic hydrogen (PAH).
Keywords :
interface phenomena; laser cavity resonators; optical fabrication; optical materials; passivation; quantum well lasers; quantum wells; InGaAs-InGaAsP-InP; InGaAs-InGaAsP-InP multiple quantum wells; InP; MQW materials; atomic hydrogen; defect passivation; dopant; extended cavity lasers fabrication; hydrogen passivation; post-growth quantum well intermixing; Atom lasers; Atomic beams; Hydrogen; Indium gallium arsenide; Indium phosphide; Optical device fabrication; Optical materials; Passivation; Quantum well devices; Quantum well lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517413
