DocumentCode :
2171519
Title :
Wavelength conversion using polarization dependence of cross-phase modulation in an InGaAlAs multiple-quantum-well electroabsorption modulator
Author :
Zhou, Xiaoping ; Shimizu, Hiromasa ; Chaiyasit, Kumtornkittikul ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
39
Lastpage :
42
Abstract :
We experimentally demonstrate wavelength conversion using polarization dependence of cross-phase-modulation in an InGaAlAs MQW-EA modulator that can operate at small signal power less than +8 dBm and give very high extinction ratio over 31 dB.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; extinction coefficients; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical wavelength conversion; phase modulation; semiconductor quantum wells; InGaAlAs; InGaAlAs multiple-quantum-well electroabsorption modulator; cross-phase modulation; polarization dependence; wavelength conversion; Absorption; Epitaxial growth; Extinction ratio; Laser stability; Optical polarization; Photoconductivity; Probes; Quantum well devices; Tellurium; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517414
Filename :
1517414
Link To Document :
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