Title :
A reusable embedded DRAM macrocell
Author :
Diodato, P.W. ; Clemens, J.T. ; Troutman, W.W. ; Lindenberger, W.S.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
Abstract :
A charged based analysis is used to compare three DRAM cells embedded in a 0.25 μm ASIC environment. Critical charge, bit-line response, and sense amplifier sensitivity are calculated. Wafer probe measurements are shown that demonstrate milli-second hold times and explanations presented in support of using multi-transistor DRAM cells for the vast majority of high performance embedded ASIC applications
Keywords :
DRAM chips; application specific integrated circuits; 0.25 micron; ASIC; bit-line response; charged based analysis; critical charge; hold time; multi-transistor cell; reusable embedded DRAM macrocell; sense amplifier sensitivity; wafer probe measurement; Application specific integrated circuits; Capacitors; Design methodology; Fabrication; Macrocell networks; Parasitic capacitance; Probes; Random access memory; Robustness; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-3669-0
DOI :
10.1109/CICC.1997.606642
