The using of Dual-Material Gate MOSFET in suppressing Short-Channel Effects: A review

Author

Zheng, Chang-yong

Author_Institution

Sch. of Electron. & Inf. Eng., Anhui Univ. of Archit., Hefei, China

fYear

2011

fDate

9-11 Sept. 2011

Firstpage

2979

Lastpage

2982

Abstract

This paper reviews four typical examples of using Dual-Material Gate MOSFET in suppressing Short-Channel Effects. Then a novel device structure called the double doping gate (DDG) Lightly-doped-drain (LDD) MOSFET is presnted. This novel gate structure takes advantage of material work function. The model is simulated with a 2-D device simulator MEDICI. The simulation result shows that an appropriate threshold voltage can be gotten by changing the doping concentration of polysilicon. Meanwhile, the driving capacity is greatly improved compared with the conventional MOSFET. The process of the structure is not complicated which can be easily achieved today.

Keywords

MOSFET; semiconductor doping; 2D device simulator; MEDICI; doping concentration; double doping gate; driving capacity; dual-material gate MOSFET; gate structure; lightly-doped-drain MOSFET; material work function; polysilicon; short-channel effects; Degradation; Doping; Electric fields; Logic gates; MOSFET circuits; Materials; Reliability; Dual-Material (DMG); MOSFETs; short-channel effects; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Control (ICECC), 2011 International Conference on

Conference_Location

Ningbo

Print_ISBN

978-1-4577-0320-1

Type

conf

DOI

10.1109/ICECC.2011.6066420

Filename

6066420