Title :
Mechanism of emission-wavelength extension in nitrided InAs/GaAs quantum dots
Author :
Matsushita, K. ; Inoue, T. ; Shang, X.Z. ; Mori, T. ; Seki, H. ; Kikuno, M. ; Kita, T. ; Wada, O. ; Mori, H. ; Sakata, T. ; Yasuda, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
Abstract :
Emission wavelength extension into >1.3 μm region by atomic-layer nitridation of InAs QDs has been analyzed using AFM and TEM. We found that the nitridation increases the QD size and aspect ratio and modifies the strain distribution.
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; nitridation; quantum dot lasers; semiconductor quantum dots; transmission electron microscopy; AFM; InAs-GaAs; TEM; aspect ratio; atomic-layer nitridation; emission-wavelength extension; nitrided InAs-GaAs quantum dots; strain distribution; Atomic force microscopy; Atomic measurements; Capacitive sensors; Gallium arsenide; Quantum dot lasers; Quantum dots; Radio frequency; Substrates; Transmission electron microscopy; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517417
