Title :
InP-based quantum dash lasers for broadband optical amplification and gas sensing applications
Author :
Somers, A. ; Kaiser, W. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Technische Phys., Wurzburg Univ., Germany
Abstract :
The excellent wavelength tuning properties of InP-based quantum dash layer structures were used to realise ultra-wide gain bandwidth lasers (>250 nm) for 1.55 μm telecom applications and high performance long-wavelength 1.9 μm lasers for gas sensing applications.
Keywords :
III-V semiconductors; gas sensors; indium compounds; laser tuning; optical transmitters; quantum well lasers; semiconductor optical amplifiers; semiconductor quantum wells; 1.55 micron; 1.9 micron; InP; InP-based quantum dash lasers; broadband optical amplification; gas sensing applications; high performance long-wavelength lasers; telecom applications; ultra-wide gain bandwidth lasers; wavelength tuning properties; Bandwidth; Gas lasers; Indium phosphide; Laser tuning; Optical sensors; Photoluminescence; Quantum dot lasers; Quantum dots; Quantum well lasers; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517418
