Single mode performance and structural quality of MOVPE grown InP based quantum cascade lasers

Author

Green, R.P. ; Wilson, L.R. ; Revin, D.G. ; Zibik, E.A. ; Cockburn, J.W. ; Offermans, P. ; Koenraad, P.M. ; Wolter, J.H. ; Pflügl, C. ; Schrenk, W. ; Strasse, G. ; Tey, C.M. ; Krysa, A.B. ; Roberts, J.S. ; Cullis, A.G.

Author_Institution

Dept. of Phys. & Astron., Univ. of Sheffield, UK

fYear

2005

fDate

8-12 May 2005

Firstpage

64

Lastpage

67

Abstract

We report single longitudinal mode, T>300 K operation of MOVPE-grown InGaAs/AlInAs DFB quantum cascade lasers. Structural investigation indicates the epitaxial quality of the active region to be equivalent to high performing MBE grown structures.

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum cascade lasers; semiconductor growth; InGaAs-AlInAs; InGaAs-AlInAs DFB quantum cascade lasers; InP based quantum cascade lasers; MBE grown structures; MOVPE; epitaxial quality; single mode performance; Epitaxial growth; Epitaxial layers; Gratings; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Pollution measurement; Quantum cascade lasers; Temperature measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517420

Filename

1517420