Title :
New low k a-SiC:H dielectric barrier for advanced interconnects
Author :
Favennec, L. ; Jousseaume, V. ; Zenasni, A. ; Bouchu, D. ; Passemard, G.
Author_Institution :
STMicroelectron., Crolles
Abstract :
This paper presents a new a-SiC:H copper barrier deposited by PECVD using a precursor containing a phenyl group. Dielectric constant as low as 3.2 can be obtained by conserving phenyl cycles in the thin film. Material optimisation was performed in order to obtain both low k and Cu diffusion barrier behaviours. The optimized a-SiC:H was successfully integrated in a one metal level damascene interconnection as dielectric hard-mask and etch stop layers
Keywords :
copper; diffusion barriers; hydrogen; integrated circuit interconnections; low-k dielectric thin films; permittivity; plasma CVD coatings; silicon compounds; PECVD; SiC:H; copper barrier; copper diffusion barrier; damascene interconnection; dielectric barrier; dielectric constant; dielectric hard-mask layers; etch stop layers; material optimisation; phenyl group; thin films; Copper; Dielectric constant; Dielectric materials; Dielectric thin films; Etching; Mass spectroscopy; Performance evaluation; Plasma applications; Plasma materials processing; Plasma sources;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648660
