DocumentCode
2171707
Title
New low k a-SiC:H dielectric barrier for advanced interconnects
Author
Favennec, L. ; Jousseaume, V. ; Zenasni, A. ; Bouchu, D. ; Passemard, G.
Author_Institution
STMicroelectron., Crolles
fYear
2006
fDate
5-7 June 2006
Firstpage
110
Lastpage
112
Abstract
This paper presents a new a-SiC:H copper barrier deposited by PECVD using a precursor containing a phenyl group. Dielectric constant as low as 3.2 can be obtained by conserving phenyl cycles in the thin film. Material optimisation was performed in order to obtain both low k and Cu diffusion barrier behaviours. The optimized a-SiC:H was successfully integrated in a one metal level damascene interconnection as dielectric hard-mask and etch stop layers
Keywords
copper; diffusion barriers; hydrogen; integrated circuit interconnections; low-k dielectric thin films; permittivity; plasma CVD coatings; silicon compounds; PECVD; SiC:H; copper barrier; copper diffusion barrier; damascene interconnection; dielectric barrier; dielectric constant; dielectric hard-mask layers; etch stop layers; material optimisation; phenyl group; thin films; Copper; Dielectric constant; Dielectric materials; Dielectric thin films; Etching; Mass spectroscopy; Performance evaluation; Plasma applications; Plasma materials processing; Plasma sources;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2006 International
Conference_Location
Burlingame, CA
Print_ISBN
1-4244-0104-6
Type
conf
DOI
10.1109/IITC.2006.1648660
Filename
1648660
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