Title :
InGaAs-AlAsSb-InP quantum cascade lasers: performance and prospects
Author :
Revin, D.G. ; Wilson, L.R. ; Zibik, E.A. ; Green, R.P. ; Cockburn, J.W. ; Steer, M.J. ; Airey, R.J. ; Hopkinson, M. ; Offermans, P. ; Koenraad, P.M. ; Wolter, J.H.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, UK
Abstract :
We report the first demonstration of InGaAs/AlAsSb/InP quantum cascade lasers. Laser characteristics and structural investigations demonstrate the significant potential of this materials system for extending the short wavelength operating limit of quantum cascade lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; optical materials; quantum cascade lasers; AlAs0.56Sb0.44 barriers; InGaAs-AlAsSb-InP; InGaAs-AlAsSb-InP quantum cascade lasers; Sb atoms; active region; electron rates; extraction rates; laser characteristics; laser operation; pulsed regime; scanning tunnelling microscopy; wavelength operating limit; Astronomy; Conducting materials; Electrons; Optical design; Optical materials; Physics; Quantum cascade lasers; Quantum well lasers; Space technology; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517423
