Title :
Mid-infrared InAs-based quantum cascade lasers
Author :
Ohtani, K. ; Ohno, H.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
We report our recent experimental results on mid-infrared InAs-based quantum cascade lasers grown on n-InAs(100) substrates by molecular beam epitaxy. An InAs double plasmon waveguide is used for the optical confinement. The completed QCLs operate at 8-14 μm wavelength range. Observed minimum threshold current density at 80 K by using InAs/AlGaSb superlattice active layers is 0.42 kA/cm2, which is the lowest threshold current density in the mid-infrared region. The observed maximum operation temperature is 270 K.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; infrared spectra; molecular beam epitaxial growth; optical waveguides; quantum cascade lasers; semiconductor growth; semiconductor superlattices; 270 K; 8 to 14 micron; 80 K; InAs; InAs double plasmon waveguide; InAs-AlGaSb; InAs-AlGaSb superlattice active layers; QCL; mid-infrared InAs-based quantum cascade lasers; molecular beam epitaxy; n-InAs(100) substrates; threshold current density; Conducting materials; Molecular beam epitaxial growth; Optical materials; Optical scattering; Optical superlattices; Optical waveguides; Plasmons; Quantum cascade lasers; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517424
