Title :
Carbon-Rich SiOCH Films with Hydrocarbon Network Bonds for Low-k Dielectrics: First-Principles Investigation
Author :
Tajima, N. ; Ohno, T. ; Hamada, T. ; Yoneda, K. ; Kobayashi, N. ; Shinriki, M. ; Miyazawa, K. ; Sakota, K. ; Hasaka, S. ; Inoue, M.
Author_Institution :
Computational Mater. Sci. Center, National Inst. for Mater. Sci., Tsukuba
Abstract :
We have computationally explored chemical structures of SiOCH low-k films that have appropriate mechanical and dielectric properties for the application to the future interconnect technology. We have focused on the carbon-rich SiOCH films where the hydrocarbon components are involved in the polymer network. It has been found that film structures of this type can have substantially smaller k-values (by ~0.5) than a typical PECVD films of 90nm technology node, with the mechanical strengths being comparable to that of the PECVD film. These structures may give films of k~2.1 if they are created experimentally
Keywords :
bonds (chemical); carbon; dielectric properties; low-k dielectric thin films; mechanical properties; silicon compounds; 90 nm; PECVD films; SiOCH; carbon-rich SiOCH low k films; chemical structures; dielectric properties; hydrocarbon network; low-k dielectrics; mechanical properties; polymer network; Appropriate technology; Chemical industry; Chemical technology; Dielectric constant; Hydrocarbons; Materials science and technology; Mechanical factors; Periodic structures; Polymer films; Semiconductor films;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648664
