Title :
Materials and device properties of ultra-thin 6.0 Å InxAl1-xAs graded buffer layers and HBTS
Author :
Sandhu, R. ; Hayashi, S. ; Noori, A.M. ; Goorsky, M. ; Cavus, A. ; Monier, C. ; Lange, M. ; Gutierrez-Aitken, A.
Author_Institution :
Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA, USA
Abstract :
The rapid kinetics of strain relaxation in InxAl1-xAs graded buffer layers (GBLs) was exploited to produce thin (0.21 μm-0.90 μm) buffer layers graded from the InP substrate to 6.0 Å. The layers were fully relaxed, with a cross-hatched surface roughness of 4 nm, and threading dislocation densities of about 108 cm-2 for the thinnest buffer and 106 cm-2 for the 0.45 and 0.90 μm GBL structures. Identical HBT structures were grown on each of these buffers. The current gain was at least 60 with low reverse leakage currents.
Keywords :
III-V semiconductors; aluminium compounds; dislocation density; heterojunction bipolar transistors; indium compounds; leakage currents; semiconductor thin films; stress relaxation; surface roughness; 0.21 to 0.90 micron; 6 Å; HBTS; InxAl1-xAs; InP; InP substrate; cross-hatched surface roughness; current gain; device properties; material properties; reverse leakage currents; strain relaxation; threading dislocation densities; ultrathin InxAl1-xAs graded buffer layers; Buffer layers; Capacitive sensors; Heterojunction bipolar transistors; Indium compounds; Indium phosphide; Material properties; Rough surfaces; Surface roughness; Temperature; Thermal resistance;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517426
