High performance selectively oxidized VCSELs and arrays for parallel high-speed optical interconnects

Author

Mederer, F. ; Grabherr, M. ; Eberhard, F. ; Ecker, I. ; Jäger, R. ; Joos, J. ; Jung, C. ; Kicherer, M. ; King, R. ; Schnitzer, P. ; Unold, H. ; Wiedenmann, D. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

2000

fDate

2000

Firstpage

1242

Lastpage

1251

Abstract

We introduce a new layout for high-bandwidth single-mode selectively oxidized vertical-cavity surface-emitting laser (VCSEL) arrays operating at 980 nm or 850 nm emission wavelength for substrate or epitaxial side emission. Coplanar feeding lines and polyimide passivation are used to reduce electrical parasitics in top-emitting GaAs and bottom-emitting InGaAs VCSELs. In order to enhance fundamental single-mode emission for larger devices of reduced series resistance a surface relief transverse mode filter is employed. Fabricated VCSELs are applied in various interconnect schemes

Keywords

optical interconnections; oxidation; semiconductor laser arrays; surface emitting lasers; 850 nm; 980 nm; GaAs; InGaAs; VCSEL array; coplanar feed line; parallel high-speed optical interconnect; polyimide passivation; selective oxidation; single mode emission; surface relief transverse mode filter; Gallium arsenide; Indium gallium arsenide; Optical arrays; Passivation; Polyimides; Substrates; Surface emitting lasers; Surface resistance; Surface waves; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th

Conference_Location

Las Vegas, NV

Print_ISBN

0-7803-5908-9

Type

conf

DOI

10.1109/ECTC.2000.853333

Filename

853333