New CMP Process that Inhibits Delamination of Copper Low-k Integration

Author

Shibuki, S. ; Sakairi, T. ; Fujii, M. ; Furui, R. ; Arakawa, S. ; Negoro, Y. ; Hirata, T. ; Hasegawa, K. ; Okamoto, T. ; Nishimura, H.

Author_Institution

Sony Corp., Atsugi

fYear

2006

fDate

5-7 June 2006

Firstpage

128

Lastpage

130

Abstract

Based on close observation of the delamination behavior of low-k films characterized by extremely weak adhesion, we found through experiments and simulations that the delamination is not simply due to friction but an important factor is local pressure caused by edge cut and dust particles. Based on these results, we have developed a new CMP process involving an innovative polishing pad that effectively inhibits low-k film delamination. In applying the new CMP process to barrier metal polishing, we tested the process on copper/low-k wiring with a low dielectric constant of less than 2.35 for the next-generation 32nm node, and verified excellent electrical characteristics

Keywords

chemical mechanical polishing; copper; delamination; low-k dielectric thin films; permittivity; 32 nm; CMP process; Cu; barrier metal polishing; copper low-k integration; copper-low-k wiring; delamination behavior; dielectric constant; extremely weak adhesion; low-k film delamination; polishing pad; Adhesives; Copper; Delamination; Dielectric films; Dielectric materials; Electric variables; Friction; Semiconductor films; Testing; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648666

Filename

1648666