DocumentCode :
2171900
Title :
High mobility InAs/AlInAs metamorphic heterostructures on InP(001)
Author :
Wallart, X. ; Lastennet, J. ; Mollot, F.
Author_Institution :
Inst. d´´Electronique, de Microelectronique et de Nanotechnologie, UMR CNRS, Villeneuve d´´Ascq, France
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
94
Lastpage :
97
Abstract :
We present the optimization of the metamorphic growth of InAs/InAlAs heterostructures on InP(001). We obtain the best electron mobility, 21500 cm2/V.s at 300K and 179000 cm2/V.s at 77K, with a composite InAs/InGaAs channel.
Keywords :
III-V semiconductors; aluminium compounds; electron mobility; indium compounds; semiconductor heterojunctions; semiconductor thin films; 300 K; 77 K; InAs-InAlAs; InP; composite channel; electron mobility; high mobility InAs-InAlAs metamorphic heterostructures; optimization; Capacitive sensors; Electron mobility; Frequency; Gallium arsenide; Indium compounds; Indium phosphide; Microelectronics; Molecular beam epitaxial growth; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517428
Filename :
1517428
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2171900
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