DocumentCode :
2171915
Title :
Volume manufacturing of 0.6 eV bandgap thermophotovoltaic devices on InAsP lattice mismatched buffers by MBE
Author :
Bird, T.E. ; Sheldon, M. ; Bresnahan, R.C. ; O´Steen, M.L. ; Gotthold, D.W. ; Wernsman, B. ; Link, S.D. ; Messham, R.L.
Author_Institution :
Process Integration Center, Veeco Instrum. Inc., Saint Paul, MN, USA
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
98
Lastpage :
101
Abstract :
We report on scaling high efficiency In0.68Ga0.32As thermophotovoltaic devices on InP from a single wafer research reactor to a 7×3" production reactor utilizing step-graded InAsyP(1-y) lattice mismatched buffers. We\´ll present uniformity, reproducibility and device results.
Keywords :
III-V semiconductors; buffer layers; gallium arsenide; indium compounds; lattice constants; molecular beam epitaxial growth; thermophotovoltaic cells; 0.6 eV; In0.68Ga0.32As; InAsP; InP; MBE; high efficiency In0.68Ga0.32As thermophotovoltaic device scaling; production reactor; single wafer research reactor; step-graded InAsP lattice mismatched buffers; volume manufacturing; Birds; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Inductors; Lattices; Manufacturing; Photonic band gap; Production; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517429
Filename :
1517429
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2171915
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