• DocumentCode
    2171915
  • Title

    Volume manufacturing of 0.6 eV bandgap thermophotovoltaic devices on InAsP lattice mismatched buffers by MBE

  • Author

    Bird, T.E. ; Sheldon, M. ; Bresnahan, R.C. ; O´Steen, M.L. ; Gotthold, D.W. ; Wernsman, B. ; Link, S.D. ; Messham, R.L.

  • Author_Institution
    Process Integration Center, Veeco Instrum. Inc., Saint Paul, MN, USA
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    98
  • Lastpage
    101
  • Abstract
    We report on scaling high efficiency In0.68Ga0.32As thermophotovoltaic devices on InP from a single wafer research reactor to a 7×3" production reactor utilizing step-graded InAsyP(1-y) lattice mismatched buffers. We\´ll present uniformity, reproducibility and device results.
  • Keywords
    III-V semiconductors; buffer layers; gallium arsenide; indium compounds; lattice constants; molecular beam epitaxial growth; thermophotovoltaic cells; 0.6 eV; In0.68Ga0.32As; InAsP; InP; MBE; high efficiency In0.68Ga0.32As thermophotovoltaic device scaling; production reactor; single wafer research reactor; step-graded InAsP lattice mismatched buffers; volume manufacturing; Birds; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Inductors; Lattices; Manufacturing; Photonic band gap; Production; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517429
  • Filename
    1517429
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2171915