Title :
Integration of air gaps based on selective ozone/TEOS deposition into a multi layer metallization scheme
Author :
Stich, A. ; Gabric, Z. ; Pamler, W. ; Schindler, G. ; Traving, M. ; Engelhardt, M.
Author_Institution :
Infineon Technol., Dresden
Abstract :
The electrical properties of copper metal lines within an air gap scheme were measured and compared to structures without air gaps. Two metal layers with air gap structures using a close-off processing scheme with selective ozone TEOS deposition were fabricated. With these air gaps, an effective k of as low as 2.3 could be achieved
Keywords :
air gaps; copper; electric properties; integrated circuit metallisation; Cu; TEOS deposition; air gap scheme; air gap structures; close-off processing scheme; copper metal lines; electrical properties; multi layer metallization scheme; selective ozone deposition; Air gaps; Capacitance; Copper; Electromigration; Etching; Fabrication; Integrated circuit interconnections; Lithography; Metallization; Testing;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648668
