Integration of air gaps based on selective ozone/TEOS deposition into a multi layer metallization scheme

Author

Stich, A. ; Gabric, Z. ; Pamler, W. ; Schindler, G. ; Traving, M. ; Engelhardt, M.

Author_Institution

Infineon Technol., Dresden

fYear

2006

fDate

5-7 June 2006

Firstpage

134

Lastpage

136

Abstract

The electrical properties of copper metal lines within an air gap scheme were measured and compared to structures without air gaps. Two metal layers with air gap structures using a close-off processing scheme with selective ozone TEOS deposition were fabricated. With these air gaps, an effective k of as low as 2.3 could be achieved

Keywords

air gaps; copper; electric properties; integrated circuit metallisation; Cu; TEOS deposition; air gap scheme; air gap structures; close-off processing scheme; copper metal lines; electrical properties; multi layer metallization scheme; selective ozone deposition; Air gaps; Capacitance; Copper; Electromigration; Etching; Fabrication; Integrated circuit interconnections; Lithography; Metallization; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648668

Filename

1648668

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2171945