Title :
Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor
Author :
Pommereau, F. ; Brenot, R. ; Landreau, J. ; Gouezigou, L.L. ; Gouezigou, O.L. ; Lelarge, F. ; Martin, F. ; Poingt, F. ; Rousseau, B. ; Duan, G.H. ; Thédrez, B.
Author_Institution :
Alcatel-Thales III-V Lab., Marcoussis, France
Abstract :
Buried ridge hetero-structure with p-n blocking layers semiconductor optical amplifiers have been designed and fabricated. Noise figure as low as 6.5 dB has been obtained in the case of low spatial hole burning, by optimising the confinement factor.
Keywords :
carrier density; laser noise; optical fabrication; optical hole burning; semiconductor device noise; semiconductor optical amplifiers; 6.5 dB; buried ridge heterostructure; confinement factor; homogeneous carrier density; low noise factor; optimisation; p-n blocking layers; semiconductor optical amplifier design; semiconductor optical amplifier fabrication; spatial hole burning; Carrier confinement; Charge carrier density; Etching; Noise figure; Optical noise; Optical saturation; Plasma chemistry; Semiconductor device noise; Semiconductor optical amplifiers; Silicon compounds;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517430
