Title :
IMD elimination and CPR improvement for an 800 MHz HBT MMIC power amplifier
Author :
Ali, F. ; Moazzam, M.R. ; Aitchison, C.
Author_Institution :
Nokia Mobile Phones, San Diego, CA, USA
Abstract :
This paper describes a novel technique for reducing the third order intermodulation (IMD) product and ACPR levels in HBT power amplifiers. This technique is based on the dynamic control of the injection/feedback of the second harmonic frequency signal to the amplifier. For a cellular frequency HBT MMIC power amplifier, a reduction of 44 dB in the 3rd order IMD level is measured at 28 dBm output power. By controlling the phase and amplitude of the injected/fedback second harmonic, a total rejection of IMD products over a wide dynamic range of input power is achieved without any change in the fundamental signal levels. The ACPR for CDMA system (IS-98 standard) over a 30 kHz bandwidth with /spl plusmn/900 KHz offset shows a 6 dB improvement. No degradation in the CDMA signal quality factor (/spl rho/) and PAE (40%) are observed. To the best of our knowledge this is the first application of this technique to HBT power amplifiers.
Keywords :
MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; bipolar analogue integrated circuits; feedback amplifiers; harmonics; heterojunction bipolar transistors; intermodulation distortion; mobile radio; 30 kHz; 40 percent; 800 MHz; CDMA signal quality factor; CDMA system; CPR improvement; HBT MMIC power amplifier; IMD elimination; IS-98 standard; cellular frequency; dynamic control; injection/feedback; second harmonic frequency signal; third order intermodulation product; Dynamic range; Feedback; Frequency measurement; Heterojunction bipolar transistors; MMICs; Multiaccess communication; Power amplifiers; Power generation; Power measurement; Power system harmonics;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682050