Title :
Effect of Porosity on Charge Transport in Porous Ultra-Low-k Dielectrics
Author :
Hong, Changsoo ; Milor, Linda
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
It is demonstrated that the free volumes or pores in porous ultra-low-k dielectrics disturb the local electric field around them. This disturbed local electric field is shown to facilitate the transport of charge particles such as copper ions, electrons, or holes. This leads to the conclusion that porosity in dielectrics can degrade the insulating property and enhance the dielectric breakdown mechanism
Keywords :
electric breakdown; electric fields; integrated circuit interconnections; low-k dielectric thin films; porosity; charge particle transport; charge transport; dielectric breakdown mechanism; insulating property; local electric field; porosity effect; porous ultra-low-k dielectrics; Analytical models; Dielectric breakdown; Dielectric constant; Dielectric devices; Dielectric materials; Finite element methods; Polarization; Propagation delay; Semiconductor materials; Thermal conductivity;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648670
