DocumentCode
2172009
Title
Effect of Porosity on Charge Transport in Porous Ultra-Low-k Dielectrics
Author
Hong, Changsoo ; Milor, Linda
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear
2006
fDate
5-7 June 2006
Firstpage
140
Lastpage
142
Abstract
It is demonstrated that the free volumes or pores in porous ultra-low-k dielectrics disturb the local electric field around them. This disturbed local electric field is shown to facilitate the transport of charge particles such as copper ions, electrons, or holes. This leads to the conclusion that porosity in dielectrics can degrade the insulating property and enhance the dielectric breakdown mechanism
Keywords
electric breakdown; electric fields; integrated circuit interconnections; low-k dielectric thin films; porosity; charge particle transport; charge transport; dielectric breakdown mechanism; insulating property; local electric field; porosity effect; porous ultra-low-k dielectrics; Analytical models; Dielectric breakdown; Dielectric constant; Dielectric devices; Dielectric materials; Finite element methods; Polarization; Propagation delay; Semiconductor materials; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2006 International
Conference_Location
Burlingame, CA
Print_ISBN
1-4244-0104-6
Type
conf
DOI
10.1109/IITC.2006.1648670
Filename
1648670
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