Title :
Non-destructive electrical characterization of low-k sidewall damage before metallization by a near-field scanned microwave probe
Author :
Schwartz, R. ; Talanov, V.V. ; Scherz, A. ; Kastenmeier, B. ; White, B. ; Satyanarayana, S.
Author_Institution :
Neocera, Inc., Beltsville, MD
Abstract :
We demonstrate a novel method to electrically characterize sidewall damage in patterned low-k dielectric films before metallization. The measurement is made on uniform trenches etched into a low-k film backed by Cu or a Cu grid. The technique, based on a near-field scanned microwave probe with ~10mum spot size, is non-contact and non-invasive, making it feasible as an in-line metrology
Keywords :
copper; integrated circuit metallisation; low-k dielectric thin films; nondestructive testing; probes; Cu; copper grid; low-k dielectric films; low-k sidewall damage; near-field scanned microwave probe; nondestructive electrical characterization; Dielectric constant; Etching; Hafnium; Metallization; Metrology; Microwave theory and techniques; Probes; Scanning electron microscopy; Spatial resolution; Strips;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648671
