DocumentCode :
2172051
Title :
Laser Spike Annealing: A Novel Post-Porosity Treatment for Significant Toughening of Low-k Organosilicates
Author :
Volksen, Willi ; Dubois, Geraud ; Kellock, Andrew ; Magbitang, Teddie P. ; Miller, Robert D. ; Cohen, Stephan ; Simonyi, Eva E. ; Ramirez, Lynher ; Wang, Yun
Author_Institution :
IBM Almaden Res. Center, San Jose, CA
fYear :
2006
fDate :
5-7 June 2006
Firstpage :
146
Lastpage :
148
Abstract :
Laser thermal treatment of organosilicate coatings in a process characterized by extremely short dwell times and extremely high temperatures, generally referred to as laser spike anneal (LSA) appears to be a viable approach to post-porosity enhancement of mechanical properties. Exposure of organosilicates in both the dense and porous state to very high temperatures (500-1300 degC) for extremely short periods of time, ranging from 200 to 800 musecs, yielded increases in the modulus by a factor of 3-5times without adversely affecting the dielectric constant. Chemical analysis of the treated methyl silsesquioxane structure indicated significant changes in the chemical composition of the film as evidenced by the disappearance of the methyl infra-red absorption associated with methyl groups attached to silicon. However, this disappearance in the methyl absorption was not reflected by a concomitant decrease in the carbon content of the film as determined by Rutherford back scattering (RBS) measurements. RBS analysis yielded a chemical composition which could be represented empirically by SixOyCmHn, the exact composition depending on the exact processing conditions
Keywords :
Rutherford backscattering; chemical analysis; insulating coatings; laser beam annealing; low-k dielectric thin films; organic insulating materials; porosity; silicon compounds; 200 to 800 mus; 500 to 1300 C; RBS analysis; RBS measurements; Rutherford back scattering measurements; SixOyCmHn; SiOCH; chemical analysis; chemical composition; dielectric constant; laser spike annealing; low-k organosilicates; mechanical properties; methyl infrared absorption; methyl silsesquioxane structure; organosilicate coatings; post-porosity treatment; Absorption; Annealing; Chemical analysis; Coatings; Dielectric constant; Mechanical factors; Optical films; Semiconductor films; Silicon; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
Type :
conf
DOI :
10.1109/IITC.2006.1648672
Filename :
1648672
Link To Document :
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