A Novel CoWP Cap Integration for Porous Low-WCu Interconnects With NH3 Plasma Treatment and Low-k Top (LKT) Dielectric Structure

Author

Kawahara, N. ; Tagami, M. ; Withers, B. ; Kakuhara, Y. ; Imura, Hajime ; Ohto, K. ; Taiji, T. ; Arita, K. ; Kurokawa, T. ; Nagase, M. ; Maruyama, Tetsuhiro ; Oda, N. ; Hayashi, Y. ; Jacobs, J. ; Sakurai, M. ; Sekine, M. ; Ueno, K.

Author_Institution

NEC Electron. Corp., Sagamihara

fYear

2006

fDate

5-7 June 2006

Firstpage

152

Lastpage

154

Abstract

A novel CoWP cap integration technology for lower leakage current and improved dielectric reliability is proposed for porous low-k/Cu interconnects, NH₃ plasma treatment before SiCN deposition reduces leakage current and improves dielectric reliability such as time-dependent dielectric break-down (TDDB) of CoWP capped Cu interconnects. The TDDB lifetime much longer than 10 years is obtained. Moreover, the leakage current less than IE-14A/mm is obtained by low-k top (LKT) dielectric structure combined with the NH₃ plasma treatment. In addition, 10% lower RC product is obtained by the LKT structure with CoWP cap

Keywords

cobalt compounds; copper; integrated circuit interconnections; leakage currents; low-k dielectric thin films; nitrogen compounds; plasma deposition; porous materials; reliability; silicon compounds; CoWP; Cu; LKT dielectric structure; SiCN; TDDB lifetime; cap integration; copper interconnects; dielectric reliability; leakage current; low-k top dielectric structure; plasma treatment; porous low-k interconnects; Cleaning; Copper; Dielectrics; Leakage current; National electric code; Plasma measurements; Surface contamination; Surface resistance; Surface treatment; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648674

Filename

1648674