• DocumentCode
    2172096
  • Title

    Design of low power CMOS PSRAM

  • Author

    Singh, N.B. ; Rai, Dharmendra Kumar ; Singh, Prashant

  • Author_Institution
    Analogue & MS ICs Design Lab., Central Electron. Eng. Res. Inst., Pilani, India
  • fYear
    2013
  • fDate
    21-23 Sept. 2013
  • Firstpage
    122
  • Lastpage
    126
  • Abstract
    Full custom design of 1KB CMOS PSRAM has been presented in this paper. Subsequent efforts putting refresh control on the DRAM have been implemented in pin out which is more compatible with small systems environment and hence more similar to the SRAM, which were designed for this environment. To achieve a compact power efficient pseudo static DRAM (PSRAM), it is designed and simulated. A PSRAM is a “one-transistor cell” dynamic RAM with non multiplexed addresses on chip in refresh circuit and an external refresh pin to control the refresh of the cell to maintain data in the memory. It is identical to SRAM except an extra refresh pin. The refresh of the memory cell occurs during the part of the cycle time when the memory is not being accessed. Here, 1K PSRAM is designed and simulated, its verification results are agreeing for pre and post layout simulations. TANNER EDA is used in the design.
  • Keywords
    CMOS memory circuits; DRAM chips; SRAM chips; integrated circuit layout; logic design; TANNER EDA simulation; dynamic RAM; external refresh pin; low power CMOS PSRAM; one-transistor cell; pseudo static DRAM; storage capacity 1 Kbit; CMOS integrated circuits; Computer architecture; Decoding; Inverters; Microprocessors; Random access memory; Transistors; DRAM; Decoder; PSRAM; Sense Amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Electronic Systems (ICAES), 2013 International Conference on
  • Conference_Location
    Pilani
  • Print_ISBN
    978-1-4799-1439-5
  • Type

    conf

  • DOI
    10.1109/ICAES.2013.6659374
  • Filename
    6659374