DocumentCode
2172096
Title
Design of low power CMOS PSRAM
Author
Singh, N.B. ; Rai, Dharmendra Kumar ; Singh, Prashant
Author_Institution
Analogue & MS ICs Design Lab., Central Electron. Eng. Res. Inst., Pilani, India
fYear
2013
fDate
21-23 Sept. 2013
Firstpage
122
Lastpage
126
Abstract
Full custom design of 1KB CMOS PSRAM has been presented in this paper. Subsequent efforts putting refresh control on the DRAM have been implemented in pin out which is more compatible with small systems environment and hence more similar to the SRAM, which were designed for this environment. To achieve a compact power efficient pseudo static DRAM (PSRAM), it is designed and simulated. A PSRAM is a “one-transistor cell” dynamic RAM with non multiplexed addresses on chip in refresh circuit and an external refresh pin to control the refresh of the cell to maintain data in the memory. It is identical to SRAM except an extra refresh pin. The refresh of the memory cell occurs during the part of the cycle time when the memory is not being accessed. Here, 1K PSRAM is designed and simulated, its verification results are agreeing for pre and post layout simulations. TANNER EDA is used in the design.
Keywords
CMOS memory circuits; DRAM chips; SRAM chips; integrated circuit layout; logic design; TANNER EDA simulation; dynamic RAM; external refresh pin; low power CMOS PSRAM; one-transistor cell; pseudo static DRAM; storage capacity 1 Kbit; CMOS integrated circuits; Computer architecture; Decoding; Inverters; Microprocessors; Random access memory; Transistors; DRAM; Decoder; PSRAM; Sense Amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Electronic Systems (ICAES), 2013 International Conference on
Conference_Location
Pilani
Print_ISBN
978-1-4799-1439-5
Type
conf
DOI
10.1109/ICAES.2013.6659374
Filename
6659374
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