Growth Behavior of Self-Formed Barrier Using Cu-Mn Alloys at 350 to 600oC

Author

Iijima, J. ; Haneda, M. ; Koike, J.

Author_Institution

Japan Sci. & Technol. Agency, Sendai

fYear

2006

fDate

5-7 June 2006

Firstpage

155

Lastpage

158

Abstract

Cu-Mn alloys were deposited on plasma TEOS dielectric layer. A diffusion barrier layer was self-formed at the interface during annealing at elevated temperatures. The growth behavior followed a logarithmic rate law at 350 and 450 degC. No interdiffusion occurred between the alloy film and TEOS after annealing at these temperatures for 100 h. At 600 degC, grain-boundary grooving of the alloy film occurred on the barrier interface side. Estimated diffusivity at the alloy/barrier interface was of the same order as grain-boundary diffusivity of Cu

Keywords

annealing; copper alloys; diffusion barriers; grain boundaries; manganese alloys; plasma deposition; 350 to 600 C; CuMn; alloy film; diffusion barrier layer; grain boundary diffusivity; grain boundary grooving; growth behavior; logarithmic rate law; plasma TEOS dielectric layer; self-formed barrier; Annealing; Atomic layer deposition; Conductivity; Copper alloys; Manganese alloys; Materials science and technology; Plasma materials processing; Plasma temperature; Temperature measurement; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648675

Filename

1648675