• DocumentCode
    2172114
  • Title

    InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance

  • Author

    Grahn, Jan ; Starski, Piotr ; Malmkvist, Mikael ; Fridman, Malin ; Malmros, Anna ; Wang, Shumin ; Mellberg, Anders ; Zirath, Herbert

  • Author_Institution
    Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    124
  • Lastpage
    128
  • Abstract
    InGaAs-InAlAs-InP HEMT is facing competition from the emerging MHEMT technology. Nonetheless, for top-performing applications requiring high gain and low noise, InP HEMT is still the preferred choice. We here present results from InP HEMT development for sub-100 nm gate length designs yielding fmax above 400 GHz and ultra-low noise hybrid amplifiers with a minimum noise temperature of 1.1 K when operated under cryogenic conditions.
  • Keywords
    III-V semiconductors; high electron mobility transistors; indium compounds; semiconductor device noise; 1.1 K; InGaAs-InAlAs-InP; InGaAs-InAlAs-InP HEMT technology; MHEMT technology; cryogenic conditions; sub-100 nm gate length designs; ultrahigh frequency performance; ultralow noise hybrid amplifiers; Consumer electronics; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Laboratories; Production; Space technology; mHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517435
  • Filename
    1517435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2172114