Title :
SOI materials defect characterization
Author :
Pham, Daniel T. ; Bich-Yen Nguyen ; O´Meara, David ; Wang, Victor ; Nguyen, Bich-yen ; Smith, James ; Veteran, Janice ; Mendicino, Michael ; Campbell, Andy
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
In this study, the SOI wafers made by various bonding or implant techniques were extensively characterized for physical defects using various metrologies such as optical, X-ray, electron microscopy and SIMS. Defect characterization was performed as received from vendors and after thinning the SOI layer by oxidation and oxide removal
Keywords :
silicon-on-insulator; SIMS; SOI material; Si; X-ray analysis; bonding; defect metrology; electron microscopy; implantation; optical analysis; oxidation; oxide removal; thinning; Annealing; Chemical technology; Cleaning; Fabrication; Optical microscopy; Silicon on insulator technology; Surface contamination; Temperature; Wafer bonding; Zinc;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634974
