Title :
Metamorphic 50 nm InAs-channel HEMT
Author :
Leuther, Arnulf ; Weber, Rainer ; Dammann, Michael ; Schlechtweg, Michael ; Mikulla, Michael ; Walther, Martin ; Weimann, Günter
Author_Institution :
IAF, Fraunhofer Inst. Appl. Solid-State Phys., Freiburg, Germany
Abstract :
A 50 nm gate length metamorphic HEMT with InAs-channel and InAlAs-barriers for high frequency low power applications has been developed. Using a composite channel layout with backside doping an on-state breakdown voltage of 1.2 V and a gmmax/go ratio of four at VDS=1.0 V was achieved. A low gm dispersion of only 5 % was measured. The realized three-stage 70 GHz LNA shows a power dissipation as low as 1.9 mW with an associated small signal gain of 6 dB.
Keywords :
III-V semiconductors; aluminium compounds; amplifiers; high electron mobility transistors; indium compounds; semiconductor device breakdown; 1.0 V; 1.2 V; 50 nm; InAlAs; InAlAs-barriers; InAs; InAs-channel HEMT; backside doping; composite channel layout; metamorphic HEMT; on-state breakdown voltage; power dissipation; Doping; Energy consumption; Frequency; Gallium arsenide; HEMTs; MMICs; Molecular beam epitaxial growth; Phased arrays; Voltage; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517436
