Extremely low noise characteristics of 0.1μm Γ-gate power metamorphic HEMT on GaAs substrate

The 0.1 μm Γ-gate power metamorphic high electron mobility transistors (MHEMTs) has been fabricated and the DC, microwave, and noise performance of the device were characterized. The MHEMT device shows the DC output characteristics having an extrinsic transconductance of 830 mS/mm and a threshold voltage of □0.62 V. The f_T and f_max obtained for the 0.1 μm×100 μm MHEMT device are 165 GHz and 275 GHz, respectively. The MHEMTs exhibit the minimum noise figure, NF_min, of 0.64 dB and associated gain of 12.4 dB at 26 GHz. The NF_min measured at 40 GHz is 1.1 dB with associated gain of 9.7 dB. This noise data is the lowest value ever reported for Γ-gate power MHEMT devices with InGaAs channel of 53% In.