Direct CMP on Porous Low-k Film for Damage-less Cu Integration

Author

Kondo, S. ; Fukaya, K. ; Ohashi, N. ; Miyazaki, T. ; Nagano, H. ; Wada, Y. ; Ishibashi, T. ; Kato, M. ; Yoneda, K. ; Soda, E. ; Nakao, S. ; Ishigami, K. ; Kobayashi, N.

Author_Institution

Semicond. Leading Edge Technol., Inc., Ibaraki

fYear

2006

fDate

5-7 June 2006

Firstpage

164

Lastpage

166

Abstract

To reduce the effective k-value to less than 2.7 for the 45-nm node, direct CMP of a porous SiOC film (k = 2.3-2.6) without a protective cap layer was applied to Cu damascene fabrication by using a damage-less sacrificial film process. The key is controlling the molecular size of surfactants in the CMP slurries or cleaning chemicals, which are related to the moisture uptake and watermark generation of hydrophobic porous SiOC films. We found that the selectivity of CoWP deposition improved on a hydrophobic SiOC surface

Keywords

chemical mechanical polishing; cobalt alloys; integrated circuit interconnections; low-k dielectric thin films; phosphorus alloys; porous materials; silicon compounds; surface cleaning; tungsten alloys; 45 nm; CMP slurries; CoWP; CoWP deposition; Cu; Cu damascene fabrication; SiOC; chemical mechanical polishing; cleaning chemicals; damage-less Cu integration; damage-less sacrificial film process; direct CMP; hydrophobic porous SiOC films; porous low-k film; selectivity; surfactant molecular size control; watermark generation; Annealing; Chemical industry; Chemical technology; Fabrication; Lead compounds; Moisture; Protection; Slurries; Surface cleaning; Watermarking;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648677

Filename

1648677