Title :
Direct CMP on Porous Low-k Film for Damage-less Cu Integration
Author :
Kondo, S. ; Fukaya, K. ; Ohashi, N. ; Miyazaki, T. ; Nagano, H. ; Wada, Y. ; Ishibashi, T. ; Kato, M. ; Yoneda, K. ; Soda, E. ; Nakao, S. ; Ishigami, K. ; Kobayashi, N.
Author_Institution :
Semicond. Leading Edge Technol., Inc., Ibaraki
Abstract :
To reduce the effective k-value to less than 2.7 for the 45-nm node, direct CMP of a porous SiOC film (k = 2.3-2.6) without a protective cap layer was applied to Cu damascene fabrication by using a damage-less sacrificial film process. The key is controlling the molecular size of surfactants in the CMP slurries or cleaning chemicals, which are related to the moisture uptake and watermark generation of hydrophobic porous SiOC films. We found that the selectivity of CoWP deposition improved on a hydrophobic SiOC surface
Keywords :
chemical mechanical polishing; cobalt alloys; integrated circuit interconnections; low-k dielectric thin films; phosphorus alloys; porous materials; silicon compounds; surface cleaning; tungsten alloys; 45 nm; CMP slurries; CoWP; CoWP deposition; Cu; Cu damascene fabrication; SiOC; chemical mechanical polishing; cleaning chemicals; damage-less Cu integration; damage-less sacrificial film process; direct CMP; hydrophobic porous SiOC films; porous low-k film; selectivity; surfactant molecular size control; watermark generation; Annealing; Chemical industry; Chemical technology; Fabrication; Lead compounds; Moisture; Protection; Slurries; Surface cleaning; Watermarking;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648677
