DocumentCode :
2172218
Title :
Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency fT of 440 GHz for millimeterwave imaging receivers applications
Author :
Elgaid, K. ; Moran, D. ; McLelland, H. ; Holland, M. ; Thayne, I.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
141
Lastpage :
143
Abstract :
The 50 nm m-HEMT exhibits extremely high fT, of 440GHz, low Fmin of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased point.
Keywords :
high electron mobility transistors; millimetre wave imaging; millimetre wave measurement; 13 dB; 26 GHz; 440 GHz; 50 nm; T-gate metamorphic HEMT; cut-off frequency; high electron mobility transistors; low noise high performance m-HEMT; millimeterwave imaging receivers; Cutoff frequency; Electrons; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; Metallization; Molecular beam epitaxial growth; Substrates; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517439
Filename :
1517439
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172218
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