DocumentCode :
2172282
Title :
A 2.3μm cutoff wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells
Author :
Sidhu, R. ; Duan, N. ; Campbell, J.C. ; Holmes, A.L., Jr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
148
Lastpage :
151
Abstract :
We report on a p-i-n photodiode on InP substrate using lattice matched GaInAs-GaAsSb type-II quantum wells for absorption up to 2.3 μm. Peak room temperature external quantum efficiency of 60% was observed at 2.3 μm.
Keywords :
III-V semiconductors; arsenic compounds; gallium compounds; indium compounds; p-i-n photodiodes; semiconductor quantum wells; 2.3 micron; GaInAs-GaAsSb; InP; InP substrate; lattice-matched GaInAs-GaAsSb type-II quantum wells; p-i-n photodiode; peak room temperature external quantum efficiency; Absorption; Dark current; Detectors; Indium phosphide; Lattices; PIN photodiodes; Photodetectors; Photonic band gap; Quantum computing; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517441
Filename :
1517441
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172282
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