• DocumentCode
    2172309
  • Title

    11 Gb/s limiting amplifier flip-chip assembled in a BGA package

  • Author

    Titus, Ward S.

  • Author_Institution
    Analog Devices, Somerset, NJ
  • fYear
    2007
  • fDate
    April 30 2007-May 2 2007
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    A 53 dB gain limiting amplifier for OC-192 and 10 GbE applications is developed in a 50 GHz fT SiGe SOI complimentary bipolar process, and has 5 mV pk-pk sensitivity, 1.25 V pk-pk maximum input signal, 14 ps (20/80%) rise/fall times and 450 mV pk-pk output into matched differential 50 Ohm loads, consuming 430 mW on a 3.3 V supply. Input Cherry-Hooper gain stages limit the -3 dB bandwidth to 11 GHz effectively filtering integrated noise to obtain low input sensitivity. A 21 GHz output bandwidth necessary for extremely fast rise times is obtained by incorporating output buffer transistor, ESD and pad parasitics into on-chip transmission lines (TLs) and by using flip chip assembly and ball grid array packaging techniques.
  • Keywords
    Ge-Si alloys; amplifiers; ball grid arrays; bipolar integrated circuits; flip-chip devices; limiters; silicon-on-insulator; BGA package; Cherry-Hooper gain; Si-Ge; SiGe SOI complimentary bipolar process; ball grid array packaging; bandwidth 11 GHz; bandwidth 21 GHz; bit rate 11 Gbit/s; flip-chip; limiting amplifier; on-chip transmission lines; power 430 mW; voltage 3.3 V; Assembly; Bandwidth; Differential amplifiers; Filtering; Gain; Germanium silicon alloys; Impedance matching; Packaging; Signal processing; Silicon germanium; Limiting amplifier; SiGe bipolar; integrated circuits; sensitivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sarnoff Symposium, 2007 IEEE
  • Conference_Location
    Nassau Inn, Princeton, NJ
  • Print_ISBN
    978-1-4244-2483-2
  • Type

    conf

  • DOI
    10.1109/SARNOF.2007.4567379
  • Filename
    4567379