Title :
High bandwidth-efficiency long-wavelength PIN photodiodes
Author :
Sankaralingam, Rajkumar ; Fay, Patrick
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
Abstract :
A new drift-enhanced dual-absorption photodetector design that achieves a high bandwidth-efficiency product is reported. Photodetectors fabricated using this design achieved bandwidths of 30 GHz at 1.55 μm with a responsivity of 0.82 A/W for a bandwidth-efficiency product of 19.7 GHz. This design appears promising for allowing simple vertically-illuminated photodetectors to be applied in high-speed, high-sensitivity systems.
Keywords :
p-i-n photodiodes; photodetectors; 19.7 GHz; 30 GHz; bandwidth-efficiency; drift-enhanced dual-absorption photodetector; long-wavelength PIN photodiodes; photodetectors fabrication; sensitivity systems; speed systems; Absorption; Anodes; Bandwidth; Cathodes; Coatings; Indium gallium arsenide; Indium phosphide; Optical device fabrication; PIN photodiodes; Photodetectors;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517442
