DocumentCode
2172318
Title
High bandwidth-efficiency long-wavelength PIN photodiodes
Author
Sankaralingam, Rajkumar ; Fay, Patrick
Author_Institution
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
fYear
2005
fDate
8-12 May 2005
Firstpage
152
Lastpage
155
Abstract
A new drift-enhanced dual-absorption photodetector design that achieves a high bandwidth-efficiency product is reported. Photodetectors fabricated using this design achieved bandwidths of 30 GHz at 1.55 μm with a responsivity of 0.82 A/W for a bandwidth-efficiency product of 19.7 GHz. This design appears promising for allowing simple vertically-illuminated photodetectors to be applied in high-speed, high-sensitivity systems.
Keywords
p-i-n photodiodes; photodetectors; 19.7 GHz; 30 GHz; bandwidth-efficiency; drift-enhanced dual-absorption photodetector; long-wavelength PIN photodiodes; photodetectors fabrication; sensitivity systems; speed systems; Absorption; Anodes; Bandwidth; Cathodes; Coatings; Indium gallium arsenide; Indium phosphide; Optical device fabrication; PIN photodiodes; Photodetectors;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517442
Filename
1517442
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