• DocumentCode
    2172329
  • Title

    Destruction of volatile organic compounds used in a semiconductor industry by a capillary tube discharge reactor

  • Author

    Kohno, H. ; Tamura, M. ; Shibuya, A. ; Honda, S. ; Berezin, A.A. ; Chang, J.S. ; Yamamoto, T.

  • Author_Institution
    R&D Center, Asahikogyosha Co. Ltd., Chiba, Japan
  • Volume
    2
  • fYear
    1995
  • fDate
    8-12 Oct 1995
  • Firstpage
    1445
  • Abstract
    Nonthermal plasma technologies offer an innovative approach to the problem of decomposing various volatile organic compounds (VOCs). We focussed on dc capillary tube discharge plasma reactors to study the decomposition/destruction efficiency for toluene, EGM, trichloroethane, and trichloroethylene at 50 to 2300 ppm level in dry air. The effects of gas flow rate, VOC concentration, and reactor operating conditions on the decomposition and analysis of reactant conversion for each VOC were investigated. The results show that VOC destruction efficiency is as high as 90% even under a short residence time (3.8 ms) with a destruction energy efficiency of up to 9.5 g (VOC)/kWh. Laboratory-scale plasma technology was successfully demonstrated towards the application of VOC control in the semiconductor clean room environments
  • Keywords
    clean rooms; discharges (electric); gas-discharge tubes; organic compounds; plasma applications; semiconductor device manufacture; EGM; capillary tube discharge reactor; clean room environments; dc capillary tube discharge plasma reactors; destruction efficiency; destruction energy efficiency; gas flow rate; reactant conversion; reactor operating conditions; semiconductor industry; toluene; trichloroethane; trichloroethylene; volatile organic compounds; Dielectrics; Electron tubes; Electronics industry; Frequency; Gases; Inductors; Plasma applications; Plasma chemistry; Plasma materials processing; Volatile organic compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE
  • Conference_Location
    Orlando, FL
  • ISSN
    0197-2618
  • Print_ISBN
    0-7803-3008-0
  • Type

    conf

  • DOI
    10.1109/IAS.1995.530472
  • Filename
    530472