DocumentCode
2172329
Title
Destruction of volatile organic compounds used in a semiconductor industry by a capillary tube discharge reactor
Author
Kohno, H. ; Tamura, M. ; Shibuya, A. ; Honda, S. ; Berezin, A.A. ; Chang, J.S. ; Yamamoto, T.
Author_Institution
R&D Center, Asahikogyosha Co. Ltd., Chiba, Japan
Volume
2
fYear
1995
fDate
8-12 Oct 1995
Firstpage
1445
Abstract
Nonthermal plasma technologies offer an innovative approach to the problem of decomposing various volatile organic compounds (VOCs). We focussed on dc capillary tube discharge plasma reactors to study the decomposition/destruction efficiency for toluene, EGM, trichloroethane, and trichloroethylene at 50 to 2300 ppm level in dry air. The effects of gas flow rate, VOC concentration, and reactor operating conditions on the decomposition and analysis of reactant conversion for each VOC were investigated. The results show that VOC destruction efficiency is as high as 90% even under a short residence time (3.8 ms) with a destruction energy efficiency of up to 9.5 g (VOC)/kWh. Laboratory-scale plasma technology was successfully demonstrated towards the application of VOC control in the semiconductor clean room environments
Keywords
clean rooms; discharges (electric); gas-discharge tubes; organic compounds; plasma applications; semiconductor device manufacture; EGM; capillary tube discharge reactor; clean room environments; dc capillary tube discharge plasma reactors; destruction efficiency; destruction energy efficiency; gas flow rate; reactant conversion; reactor operating conditions; semiconductor industry; toluene; trichloroethane; trichloroethylene; volatile organic compounds; Dielectrics; Electron tubes; Electronics industry; Frequency; Gases; Inductors; Plasma applications; Plasma chemistry; Plasma materials processing; Volatile organic compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE
Conference_Location
Orlando, FL
ISSN
0197-2618
Print_ISBN
0-7803-3008-0
Type
conf
DOI
10.1109/IAS.1995.530472
Filename
530472
Link To Document