DocumentCode
2172403
Title
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
Author
Zhao, Y.W. ; Dong, Z.Y.
Author_Institution
Mater. Sci. Centre, Chinese Acad. of Sci., Beijing, China
fYear
2005
fDate
8-12 May 2005
Firstpage
163
Lastpage
166
Abstract
Semi-insulating (SI) InP obtained by iron phosphide ambient annealing has very low concentration of deep level defects and better electrical property than SI-InP annealed in phosphorus ambient. The defect suppression phenomenon correlates with Fe diffusion and substitution in the annealing process. Analysis of the experimental result suggests that a high activation ratio of incorporated Fe in InP has an effect of defect suppression in Fe-doped and Fe-diffused SI-InP.
Keywords
III-V semiconductors; annealing; deep levels; doping; indium compounds; iron; Fe diffusion; Fe substitution; Fe-diffused SI-InP; Fe-doped SI-InP; InP:Fe; deep level defects; electrical property; iron phosphide ambient annealing process; semiinsulating InP; Annealing; Electrons; Heating; Indium phosphide; Iron; Manufacturing; Microelectronics; Powders; Temperature; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517445
Filename
1517445
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