Title :
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects
Author :
Zhao, Y.W. ; Dong, Z.Y.
Author_Institution :
Mater. Sci. Centre, Chinese Acad. of Sci., Beijing, China
Abstract :
Semi-insulating (SI) InP obtained by iron phosphide ambient annealing has very low concentration of deep level defects and better electrical property than SI-InP annealed in phosphorus ambient. The defect suppression phenomenon correlates with Fe diffusion and substitution in the annealing process. Analysis of the experimental result suggests that a high activation ratio of incorporated Fe in InP has an effect of defect suppression in Fe-doped and Fe-diffused SI-InP.
Keywords :
III-V semiconductors; annealing; deep levels; doping; indium compounds; iron; Fe diffusion; Fe substitution; Fe-diffused SI-InP; Fe-doped SI-InP; InP:Fe; deep level defects; electrical property; iron phosphide ambient annealing process; semiinsulating InP; Annealing; Electrons; Heating; Indium phosphide; Iron; Manufacturing; Microelectronics; Powders; Temperature; Thermal stability;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517445
