DocumentCode :
2172432
Title :
Low leakage current and high dielectric constant LPD-SiO2/MOCVD-TiO2 film grown on (NH4)2Sx, treated InP substrate
Author :
Lee, Ming-Kwei ; Huang, Jung-Jie ; Yen, Chih-Feng
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
167
Lastpage :
170
Abstract :
The electrical characteristics of fluorinated silicon dioxide/titanium oxide films on ammonium sulfide treated InP were investigated. The leakage current is 1.45×10-7 A/cm2 under the electrical field at 1.5 MV/cm and the dielectric constant is 61.2.
Keywords :
MOCVD; leakage currents; liquid phase deposition; permittivity; silicon compounds; thin films; titanium compounds; (NH4)2Sx; (NH4)2Sx treated InP substrate; InP; MOCVD-TiO2 film; SiO2- TiO2; ammonium sulfide; dielectric constant; electrical characteristics; electrical field effect; fluorinated silicon dioxide-titanium oxide films; leakage current; liquid phase deposition-SiO2 film; Dielectric substrates; Electric variables; High K dielectric materials; High-K gate dielectrics; Indium phosphide; Leakage current; Nitrogen; Photonic band gap; Temperature; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517446
Filename :
1517446
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172432
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