• DocumentCode
    2172502
  • Title

    Carrier lifetime of low-temperature-grown In0.53Ga0.47As on GaAs using an InGaAlAs metamorphic buffer

  • Author

    Jo, Seong June ; Ihn, Soo-Ghang ; Gi-Ju Lee ; Lee, Gi-Ju ; Song, Jong-In

  • Author_Institution
    Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., South Korea
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    175
  • Lastpage
    177
  • Abstract
    Dependence of carrier lifetime of low-temperature-grown In0.53Ga0.47As (LT-InGaAs) on GaAs using an InGaAlAs metamorphic buffer (M-buffer) on post-growth rapid thermal annealing was investigated. Utilization of residual dislocation in the LT-InGaAs on the M-buffer was effective in reducing the carrier lifetime, producing the carrier lifetime of 2.14 ps that is comparable to that of the Be-doped LT-InGaAs.
  • Keywords
    III-V semiconductors; aluminium compounds; buffer layers; carrier lifetime; dislocations; gallium arsenide; indium compounds; rapid thermal annealing; semiconductor thin films; Be-doped InGaAs; GaAs; In0.53Ga0.47As; InGaAlAs; InGaAlAs metamorphic buffer; carrier lifetime; low-temperature-grown In0.53Ga0.47As; post-growth rapid thermal annealing; residual dislocation; Charge carrier lifetime; Conductivity; Doping; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Photoconducting materials; Photonic band gap; Photonic crystals; Radiative recombination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517448
  • Filename
    1517448
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2172502