Title :
Evolution of composition modulations in InGaAs/InGaAsP quantum well structures due to quantum well intermixing
Author :
Hulko, Oksana ; Thompson, D.A. ; Lee, A.S.W. ; Simmons, J.G.
Author_Institution :
CEMD, McMaster Univ., Hamilton, Ont., Canada
Abstract :
The presence of the composition modulation affects the quality of thin films and their optical properties. This paper reports on TEM observations of compositional modulations that take place during rapid thermal annealing (RTA) in structures involving InGaAs QWs with InGaAsP barriers with identical In/Ga ratio. A similar compositional behavior was also observed by high resolution X-ray diffraction and photoluminescence measurements.
Keywords :
X-ray diffraction; gallium arsenide; gallium compounds; indium compounds; photoluminescence; rapid thermal annealing; semiconductor quantum wells; semiconductor thin films; transmission electron microscopy; InGaAs-InGaAsP; TEM observations; composition modulations; high resolution X-ray diffraction; optical properties; photoluminescence measurements; quantum well intermixing; quantum well structures; rapid thermal annealing; thin films; Anisotropic magnetoresistance; Annealing; Composite materials; Gallium arsenide; Geometrical optics; Indium gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Temperature; Transistors;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517450
