Evolution of composition modulations in InGaAs/InGaAsP quantum well structures due to quantum well intermixing

Author

Hulko, Oksana ; Thompson, D.A. ; Lee, A.S.W. ; Simmons, J.G.

Author_Institution

CEMD, McMaster Univ., Hamilton, Ont., Canada

fYear

2005

fDate

8-12 May 2005

Firstpage

179

Lastpage

180

Abstract

The presence of the composition modulation affects the quality of thin films and their optical properties. This paper reports on TEM observations of compositional modulations that take place during rapid thermal annealing (RTA) in structures involving InGaAs QWs with InGaAsP barriers with identical In/Ga ratio. A similar compositional behavior was also observed by high resolution X-ray diffraction and photoluminescence measurements.

Keywords

X-ray diffraction; gallium arsenide; gallium compounds; indium compounds; photoluminescence; rapid thermal annealing; semiconductor quantum wells; semiconductor thin films; transmission electron microscopy; InGaAs-InGaAsP; TEM observations; composition modulations; high resolution X-ray diffraction; optical properties; photoluminescence measurements; quantum well intermixing; quantum well structures; rapid thermal annealing; thin films; Anisotropic magnetoresistance; Annealing; Composite materials; Gallium arsenide; Geometrical optics; Indium gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517450

Filename

1517450